Green Electronic Technology

Center uses inorganic chemistry approach.

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By Marlene Cimons, National Science Foundation

In consumer products with flat panel screen displays—TV sets, cell phones, computers and GPS systems—speed is everything. The faster, the better.

These may become even faster in the near future, thanks to researchers at Oregon State University who have developed new technology with the potential to break existing speed barriers in a very big way. 

And just as important, the materials involved in making them are environmentally friendly—non-toxic and non-polluting—and much less expensive than today’s silicon-driven components. The end result will be a faster, affordable device with little, if any, environmental footprint.

“We’re looking at switches that would work many, many times faster than what is currently available,” says Douglas Keszler, director of the Center for Green Materials Chemistry at Oregon State, and distinguished professor of chemistry, adding, “Researchers have been trying to do this for decades, until now without much success.”

The technology under development is called a tunneling diode, or MIM (for “metal-insulator-metal”) diode, which is a simple, thin film device, built like a sandwich, that uses special water-based inks created by center scientists. These inks, which contain small molecular scale inorganic chemicals, are printed onto different surfaces such as wafers and act as semi-conductors.   

“We stack a metal, then a very thin oxide, then a metal on top of that, and we literally shoot electrons from one metal to another almost instantaneously,” Keszler says. “The fact that the electron transport occurs instantaneously means we can manufacture very high speed devices.”

Traditional silicon-based materials work differently, and more slowly. The silicon limits the flow of electrons in transistors, a process that restricts the speed at which electrons can move across a circuit, thus affecting how quickly computers and other devices can load programs.

MIM diodes, on the other hand, provide near-instant electron transfer, speeding up the operation many-fold. The new devices use a super smooth metal in thin film form, rather than aluminum, which is rougher, to control the flow of electrons and keep it even across the surface of the diode.

“The oxide—the middle layer—is something we produce with our inks, and, long term, we would produce the metals as well,” Keszler says.

The work recently appeared in the journal Advanced Materials, where the authors described the approach as “an intriguing new means both for designing very high-performance electronic devices and integrating them across multiple technology platforms.”

The researchers included Keszler and E. William Cowell III, Nasir Alimardani, Christopher C. Knutson, John F. Conley Jr., Brady J. Gibbons, and John F. Wager, all from Oregon State.

The MIM diode is one of several ongoing projects initiated by the center, a research facility created in fall 2008, with a three-year $1.5 million planning grant from the National Science Foundation. Its primary goal is to develop new electronic technology using a “green” inorganic chemistry approach.

Center scientists also are exploring the inks’ potential use in large area devices—an aircraft wing, for example—as well as making such objects as cell phones, garage door openers and personal computers even smaller than many already are.

“All will get smaller and faster and less expensive,” Keszler says. “We’re trying to make the process cleaner, with fewer steps and with higher performance.”

Currently, the manufacture of electronic devices is often wasteful and potentially hazardous, sometimes using dangerous or cancer-causing materials, and resulting in higher than necessary levels of greenhouse gas emissions, the latter a major contributor to global warming. In recent years, more and more scientists have been working to discover environmentally-gentle ways of making new consumer products, as well as cleaner, renewable energy sources.

Producing the MIM diode, for example, results in minimal waste, unlike the silicon wafer, Keszler says. With silicon, every gram of material in an integrated circuit produces about 1,000 grams of waste, he says. With the new diode, the inks are the active components, replacing those made of silicon.